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PN930
PN930
NPN General Purpose Amplifier
* This device is designed for low noise, high gain, general purpose applications at collector currents from 1A to 50mA.
1
TO-92
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings* TA=25C unless otherwise noted
Symbol Parameter Value Units
VCEO VCBO VEBO IC TJ, TSTG
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
45 45 5.0 100 - 55 ~ 150
V V V mA C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaird. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics TA=25C unless otherwise noted
Symbol Parameter Test Condition IC = 10mA, IB = 0 IC = 10A, IE = 0 IE = 10nA, IC = 0 VCE = 5.0V VCB = 45V, IE = 0 VCB = 45V, IE = 0 VCB = 45V, IE = 0, TA = 170C VEB = 5.0V, IC = 0 VCE = 5.0V, IC = 10A VCE = 5.0V, IC = 10A, TA = -55C VCE = 5.0V, IC = 500A VCE = 5.0V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 10mA, IB = 0.5mA VCB = 5.0V, f = 1.0MHz IC = 500A, VCE = 5.0V, f = 20MHz IC = 1.0mA, VCE = 5.0V, f = 1.0KHz IC = 1.0mA, VCE = 5.0V, f = 1.0KHz 1.5 150 25 0.6 10 20 150 Min. 45 45 5.0 2.0 10 10 10 10 300 Max. Units V V V nA nA nA A nA Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO ICES IEBO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current
On Characteristics DC Current Gain hFE
600 1.0 1.0 8.0 600 32 600 1.0 x10-6 mho dB V V pF
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Small Signal Characteristics Output Capacitance Cob hfe hib hrb hob NF Small Signal Current Gain Input Impedance Voltage Feedback Ratio Output Admittance Noise Figure
VCE = 5.0V, IC = 10A RG = 10K, BW = 15.7KHz
3.0
* Pulse Test: Pulse Width 300ms, Duty Cycle 2.0%
(c)2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN930
Thermal Characteristics TA=25C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/C C/W C/W
(c)2002 Fairchild Semiconductor Corporation
Rev. B, November 2002
PN930
Package Dimensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. I1

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